Due to the complicated artefacts in SIMS depth profiling, SIMS depth resolution is difficult to evaluate. For evaluation of the SIMS depth resolution, delta-doped layers are more useful than sharp interfaces, because the matrix effect and the sputtering rate change can be minimized in profiling thro
✦ LIBER ✦
Hot electrons in delta-doped GaAs(Si) layers
✍ Scribed by C.A.C. Mendonça; L.M.R. Scolfaro; F. Plentz; E.A. Meneses; A.T. Oliveira Jr.; R. Rodrigues; P.S.S. Guimarães; J.C. Bezerra; I.F.L. Dias; A.G. Oliveira
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 246 KB
- Volume
- 75
- Category
- Article
- ISSN
- 0038-1098
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
GaAs delta-doped layers in Si for evalua
✍
D. W. Moon; J. Y. Won; K. J. Kim; H. J. Kim; H. J. Kang; M. Petravic
📂
Article
📅
2000
🏛
John Wiley and Sons
🌐
English
⚖ 153 KB
👁 1 views
Far infrared emission from hot electrons
✍
E. Gornik; D.C. Tsui
📂
Article
📅
1978
🏛
Elsevier Science
🌐
English
⚖ 320 KB
Negative magnetoresistance in Si atomic-
✍
Hideo Goto; Wen Shi; Takamasa Suzuki; Nobuhiko Sawaki; Hiroshi Ito; Kunihiko Har
📂
Article
📅
1995
🏛
Elsevier Science
🌐
English
⚖ 500 KB
Length dependent hot electron noise in d
✍
V. Bareikis; J. Liberis; A. Matulionis; R. Miliušyt≐; J. Požela; P. Sakalas
📂
Article
📅
1989
🏛
Elsevier Science
🌐
English
⚖ 324 KB
Remote polar phonon scattering for hot e
✍
J.P. Leburton; G. Dorda
📂
Article
📅
1981
🏛
Elsevier Science
🌐
English
⚖ 178 KB
Nonlinear electron transport in Si δ-dop
✍
G. Li; W. Xu; P. Hawker; A.A. Allerman; N. Hauser; C. Jagadish
📂
Article
📅
1995
🏛
Elsevier Science
🌐
English
⚖ 210 KB
In this paper we report abnormal non-ohmic behaviour observed in Si \(\delta\)-doped GaAs. We have performed measurements in Hall bar and Van der Pauw geometries in which electron transport phenomena can be studied by looking into the dependence of the device resistance \(\boldsymbol{R}_{x x}\) on t