Near-surface electrical effects of oxidation and hydrogenation in silicon

✍ Scribed by I. Delidais; D. Ballutaud; A. Boutry-Forveille; J.-L. Maurice; M. Aucouturier; B. Leroy

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 346 KB
• Volume: 4
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(89)90257-2

✦ Synopsis

The effects of oxidation and hydrogenation on the electrical properties of silicon are studied by corroborating secondary ion mass spectroscol~v (SIMS) analyses with electron beam induced current (EBIO measurements. ?he oxidation cancels the EBIC response in the polycrystalline solargrade material investigated while it enhances this response in a .float zone (FZ) reference. The EBIC signal disappearance is associated with the presence of oxygen clusters grown during the oxidation in the near-surface (100 nm) zone. Hydrogenation leads to hydrogen decoration of the oxide precipitates and to complete restoration of the EBIC response.