Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures
β Scribed by Shalygin, V A; Vorobjev, L E; Glukhovskoy, A V; Danilov, S N; Panevin, V Yu; Firsov, D A; Volovik, B V; Ledentsov, N N; Livshits, D A; Ustinov, V M; Shernyakov, Yu M; Tsatsul'nikov, A F; Weber, A; Grundmann, M
- Book ID
- 120654002
- Publisher
- Institute of Physics
- Year
- 2001
- Tongue
- English
- Weight
- 91 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0957-4484
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## Abstract We have studied the structural properties of ordered InGaAs/GaAs(001) quantum dot chains multilayer by highβresolution Xβray diffraction. Two systems of lateral satellites, one of which being inclined with respect to the sample surface normal, i.e. the growth direction [001], were obser
In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In 0.15 Ga 0.85 As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening i