In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In 0.15 Ga 0.85 As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening i
Structural anisotropy of InGaAs/GaAs(001) quantum dot chains structures
β Scribed by Kladko, V. P. ;Slobodian, M. V. ;Strelchuk, V. V. ;Yefanov, O. M. ;Machulin, V. F. ;Mazur, Yu. I. ;Wang, Zh. M. ;Salamo, G. J.
- Book ID
- 105364357
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 334 KB
- Volume
- 204
- Category
- Article
- ISSN
- 0031-8965
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β¦ Synopsis
Abstract
We have studied the structural properties of ordered InGaAs/GaAs(001) quantum dot chains multilayer by highβresolution Xβray diffraction. Two systems of lateral satellites, one of which being inclined with respect to the sample surface normal, i.e. the growth direction [001], were observed. The measured inclination of 30.0Β° Β± 2.5Β° does not affect the diffraction profile from planar superlattice (SL), i.e. SL peaks are not inclined with respect to the GaAs substrate peak. We identify the splitting of coherent SL satellites for all orders as well as for two perpendicular directions. This splitting most likely indicates that two discrete periods exist in SL structure. (Β© 2007 WILEYβVCH Verlag GmbH & Co. KGaA, Weinheim)
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