๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

NBTI reliability on high-k metal-gate SiGe transistor and circuit performances

โœ Scribed by Jiann-Shiun Yuan; Wen-Kuan Yeh; Shuyu Chen; Chia-Wei Hsu


Book ID
108210925
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
519 KB
Volume
51
Category
Article
ISSN
0026-2714

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Implications of fin width scaling on var
โœ S. Chabukswar; D. Maji; C.R. Manoj; K.G. Anil; V. Ramgopal Rao; F. Crupi; P. Mag ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 716 KB

In this paper, we report a study to understand the fin width dependence on performance, variability and reliability of n-type and p-type triple-gate fin field effect transistors (FinFETs) with high-k dielectric and metal gate. Our results indicate that with decreasing fin width the well-known perfor