## Abstract Numerical simulation of nanoscale doubleβgate SOI (SiliconβonβInsulator) greatly depends on the accurate representation of quantum mechanical effects. These effects include, mainly, the quantum confinement of carriers by gateβoxides in the direction normal to the interfaces, and the qua
β¦ LIBER β¦
nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs
β Scribed by Zhibin Ren; Venugopal, R.; Goasguen, S.; Datta, S.; Lundstrom, M.S.
- Book ID
- 114617206
- Publisher
- IEEE
- Year
- 2003
- Tongue
- English
- Weight
- 937 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0018-9383
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