An Analytical Model for the Threshold Voltage Shift Caused by Two-Dimensional Quantum Confinement in Undoped Multiple-Gate MOSFETs

✍ Scribed by Granzner, R.; Schwierz, F.; Polyakov, V.M.

• Book ID: 114618848
• Publisher: IEEE
• Year: 2007
• Tongue: English
• Weight: 188 KB
• Volume: 54
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2007.902167