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An Analytical Model for the Threshold Voltage Shift Caused by Two-Dimensional Quantum Confinement in Undoped Multiple-Gate MOSFETs

โœ Scribed by Granzner, R.; Schwierz, F.; Polyakov, V.M.


Book ID
114618848
Publisher
IEEE
Year
2007
Tongue
English
Weight
188 KB
Volume
54
Category
Article
ISSN
0018-9383

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