Surface characterization of thin silicon
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D. RistiΔ; V. HolΓ½; M. Ivanda; M. MarciuΕ‘; M. Buljan; O. Gamulin; K. FuriΔ; M. R
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Article
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2011
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Elsevier Science
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English
β 685 KB
The silicon-rich oxide (SiO x ) films were deposited using the LPCVD (Low Pressure Chemical Vapour Deposition) method at the temperature of 570 Β°C and with silane and oxygen as the reactant gasses. The films were deposited on silicon (1 1 1) substrates. The flows of oxygen and silan in the horizonta