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Oxidation of the surface of a thin amorphous silicon film

✍ Scribed by Ana G. Silva; Kjeld Pedersen; Zheshen S. Li; Per Morgen

Book ID
113937014
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
550 KB
Volume
520
Category
Article
ISSN
0040-6090

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Surface characterization of thin silicon
Surface characterization of thin silicon-rich oxide films
✍ D. RistiΔ‡; V. HolΓ½; M. Ivanda; M. MarciuΕ‘; M. Buljan; O. Gamulin; K. FuriΔ‡; M. R πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 685 KB

The silicon-rich oxide (SiO x ) films were deposited using the LPCVD (Low Pressure Chemical Vapour Deposition) method at the temperature of 570 Β°C and with silane and oxygen as the reactant gasses. The films were deposited on silicon (1 1 1) substrates. The flows of oxygen and silan in the horizonta