The silicon-rich oxide (SiO x ) films were deposited using the LPCVD (Low Pressure Chemical Vapour Deposition) method at the temperature of 570 Β°C and with silane and oxygen as the reactant gasses. The films were deposited on silicon (1 1 1) substrates. The flows of oxygen and silan in the horizonta
β¦ LIBER β¦
Silicon Oxide Surface as a Substrate of Polymer Thin Films
β Scribed by Shin, K.; Hu, X.; Zheng, X.; Rafailovich, M. H.; Sokolov, J.; Zaitsev, V.; Schwarz, S. A.
- Book ID
- 127174984
- Publisher
- American Chemical Society
- Year
- 2001
- Tongue
- English
- Weight
- 96 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0024-9297
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