We demonstrate Coulomb blockade oscillations in different single-electron devices in Silicon-On-Insulator (SOI) films up to temperatures of 300 K. The layer sequence in SOI allows the underetching of these devices in order to realize suspended, highly doped silicon nanostructures. Similar suspended
β¦ LIBER β¦
Nanoelectronics beyond silicon
β Scribed by Wolfgang Hoenlein; Georg S. Duesberg; Andrew P. Graham; Franz Kreupl; Maik Liebau; Werner Pamler; Robert Seidel; Eugen Unger
- Book ID
- 108207552
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 689 KB
- Volume
- 83
- Category
- Article
- ISSN
- 0167-9317
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