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Silicon nanoelectronic devices with delta-doped layers

✍ Scribed by F. Wittmann; H. Gossner; I. Eisele

Book ID
104631875
Publisher
Springer US
Year
1995
Tongue
English
Weight
679 KB
Volume
6
Category
Article
ISSN
0957-4522

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Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s