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Growth of delta-doped silicon layers by molecular beam epitaxy with simultaneous lowenergy ion bombardment of the growth surface

✍ Scribed by Sh. G. Shengurov; V. N. Shabanov; A. V. Shabanov


Book ID
110123234
Publisher
SP MAIK Nauka/Interperiodica
Year
1997
Tongue
English
Weight
63 KB
Volume
23
Category
Article
ISSN
1063-7850

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