✍ Scribed by A. Tilke; A. Erbe; L. Pescini; H. Krömmer; R.H. Blick; H. Lorenz; J.P. Kotthaus
No coin nor oath required. For personal study only.
We demonstrate Coulomb blockade oscillations in different single-electron devices in Silicon-On-Insulator (SOI) films up to temperatures of 300 K. The layer sequence in SOI allows the underetching of these devices in order to realize suspended, highly doped silicon nanostructures. Similar suspended silicon beams are fabricated to form novel nanomechanical resonators that can be excited at radio frequencies up to about 300 MHz. Controlling the vibration frequency by a side-gate voltage, these resonators allow charge detection with a sensitivity of 0.1 e/ √ Hz, comparable to that of cryogenic single-electron devices.
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