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Nanocrystal size modifications in porous silicon by preanodization ion implantation

✍ Scribed by Pavesi, L.; Giebel, G.; Ziglio, F.; Mariotto, G.; Priolo, F.; Campisano, S. U.; Spinella, C.


Book ID
121750094
Publisher
American Institute of Physics
Year
1994
Tongue
English
Weight
431 KB
Volume
65
Category
Article
ISSN
0003-6951

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Silicon nanocrystal formation in thin th
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Thin thermally grown silicon oxides are implanted with a high dose of silicon using very low energy ion implantation. After high temperature annealing, the oxides are observed by Transmission Electron Microscopy which reveals the existence of silicon nano-crystals. The electrical properties of metal