✦ LIBER ✦

Properties of InAs nanocrystals in silicon formed by sequential ion implantation

✍ Scribed by A.L Tchebotareva; J.L Brebner; S Roorda; C.W White

Book ID: 114164591
Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 485 KB
Volume: 175-177
Category: Article
ISSN: 0168-583X
DOI: 10.1016/s0168-583x(00)00660-1

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

GaAs nanocrystals formed by sequential i

GaAs nanocrystals formed by sequential ion implantation

✍ White, C. W.; Budai, J. D.; Zhu, J. G.; Withrow, S. P.; Zuhr, R. A.; Hembree, D. 📂 Article 📅 1996 🏛 American Institute of Physics 🌐 English ⚖ 495 KB

Raman Scattering and Backscattering Stud

Raman Scattering and Backscattering Studies of Silicon Nanocrystals Formed Using Sequential Ion Implantation

✍ Gayatri Sahu, Rajesh Kumar, Durga Prasad Mahapatra 📂 Article 📅 2013 🏛 Springer Netherlands 🌐 English ⚖ 622 KB

Depth profile investigations of silicon

Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation

✍ Yerci, S.; Yildiz, I; Kulakci, M.; Serincan, U.; Barozzi, M.; Bersani, M.; Turan 📂 Article 📅 2007 🏛 American Institute of Physics 🌐 English ⚖ 583 KB

Luminescence properties of GaAs nanocrys

Luminescence properties of GaAs nanocrystals fabricated by sequential ion implantation

✍ Y Kanemitsu; H Tanaka; T Kushida; K.S Min; H.A Atwater 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 80 KB

Visible photoluminescence from silicon n

Visible photoluminescence from silicon nanocrystals formed in silicon dioxide by ion implantation and thermal processing

✍ Tsutomu Shimizu-Iwayama; Yoichi Terao; Atsushi Kamiya; Motonori Takeda; Setsuo N 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 398 KB

GaAs nanocrystals fabricated by sequenti

GaAs nanocrystals fabricated by sequential ion implantation: structural and luminescence properties

✍ Y Kanemitsu; H Tanaka; T Kushida; K.S Min; H.A Atwater 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 196 KB