GaAs nanocrystals fabricated by sequential ion implantation: structural and luminescence properties
β Scribed by Y Kanemitsu; H Tanaka; T Kushida; K.S Min; H.A Atwater
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 196 KB
- Volume
- 7
- Category
- Article
- ISSN
- 1386-9477
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π SIMILAR VOLUMES
Defect-band-free luminescence is observed from ZnO nanoparticles fabricated by implantation of 60 keV Zn + ions in silica glass (SiO 2 ) to 1.0 β’ 10 17 ions/cm 2 and subsequent oxidation at 600 Β°C for 1 h. To clarify the mechanism, the samples were evaluated by optical absorption spectroscopy, grazi
## Abstract ZnO substrates and films were intentionally implanted with rare earth and transition metal ions. The influence of the implantation and subsequent air thermal annealing treatments on the structural and optical properties of ZnO samples were studied by using Rutherford backscattering spec