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Defect-band-free luminescence from ZnO nanoparticles fabricated by ion implantation and thermal oxidation

โœ Scribed by H. Amekura; Y. Sakuma; M. Yoshitake; Y. Takeda; N. Kishimoto; Ch. Buchal


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
323 KB
Volume
257
Category
Article
ISSN
0168-583X

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โœฆ Synopsis


Defect-band-free luminescence is observed from ZnO nanoparticles fabricated by implantation of 60 keV Zn + ions in silica glass (SiO 2 ) to 1.0 โ€ข 10 17 ions/cm 2 and subsequent oxidation at 600 ยฐC for 1 h. To clarify the mechanism, the samples were evaluated by optical absorption spectroscopy, grazing incidence X-ray diffraction (GIXRD), photoluminescence (PL) spectroscopy and sputter depth profiling using X-ray excited Auger electron spectroscopy (XAES). Based on these observations, we discuss the possible origins of defectband-free luminescence; i.e. the stoichiometric formation of ZnO nanoparticles due to the coexistence of metallic Zn nanoparticles, and the suppression of additional transformation of ZnO to Zn 2 SiO 4 phase at the low oxidation temperature of 600 ยฐC.


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