Defect-band-free luminescence from ZnO nanoparticles fabricated by ion implantation and thermal oxidation
โ Scribed by H. Amekura; Y. Sakuma; M. Yoshitake; Y. Takeda; N. Kishimoto; Ch. Buchal
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 323 KB
- Volume
- 257
- Category
- Article
- ISSN
- 0168-583X
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โฆ Synopsis
Defect-band-free luminescence is observed from ZnO nanoparticles fabricated by implantation of 60 keV Zn + ions in silica glass (SiO 2 ) to 1.0 โข 10 17 ions/cm 2 and subsequent oxidation at 600 ยฐC for 1 h. To clarify the mechanism, the samples were evaluated by optical absorption spectroscopy, grazing incidence X-ray diffraction (GIXRD), photoluminescence (PL) spectroscopy and sputter depth profiling using X-ray excited Auger electron spectroscopy (XAES). Based on these observations, we discuss the possible origins of defectband-free luminescence; i.e. the stoichiometric formation of ZnO nanoparticles due to the coexistence of metallic Zn nanoparticles, and the suppression of additional transformation of ZnO to Zn 2 SiO 4 phase at the low oxidation temperature of 600 ยฐC.
๐ SIMILAR VOLUMES
ZnO thin films on sapphire substrate were fabricated by ion implantation combined with thermal oxidation. A sapphire substrate was implanted with 50 keV zinc ions at 350 ยฐC with a fluence of 1.5 ร 10 17 ions cm ร2 , then annealed in a tube furnace in oxygen ambient in 2 h at 650 ยฐC. Photoluminescenc