Nano-scale analysis of precipitates in nitrogen-doped Czochralski silicon
β Scribed by G.A. Rozgonyi; A. Karoui; A. Kvit; G. Duscher
- Book ID
- 108411258
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 874 KB
- Volume
- 66
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract In this paper, the effects of vacancies introduced by rapid thermal processing (RTP) on nucleation and growth of oxide precipitates in Czochralski (Cz) silicon are elucidated. Moreover, the nitrogen and vacancy enhancement roles in oxide precipitation are differentiated through designin
The intensity of the infrared absorption band at 1107 cm Γ 1 , related to interstitial oxygen (O i ) concentration, decreased as the Ge concentration increased in Ga and Ge codoped CZ-Si crystals. In contrast, the number of precipitates observed on the etched surfaces of CZ-Si wafers increased as th
The effect of nitrogen doping on the minority carrier lifetime in Czochralski silicon (CZ-Si) passivated in dry O at different temperatures was studied. It was found that the most effective passivation temperature of 2 nitrogen-doped CZ silicon (NCZ-Si) wafers was 1000 8C, the same as that of CZ-Si