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n-type conductivity in sublimation-grown AlN bulk crystals

โœ Scribed by T. Schulz; K. Irmscher; M. Albrecht; C. Hartmann; J. Wollweber; R. Fornari


Book ID
112182580
Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
190 KB
Volume
1
Category
Article
ISSN
1862-6254

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Dislocation Reduction in AlN and GaN Bul
โœ Albrecht, M. ;Nikitina, I. P. ;Nikolaev, A. E. ;Melnik, Yu. V. ;Dmitriev, V. A. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 185 KB ๐Ÿ‘ 1 views

We analyse the dislocation distribution in GaN and AlN bulk crystals by transmission electron microscopy and X-ray diffraction. The crystals are grown by hydride vapour phase epitaxy onto 6H-SiC[0001] and Si(111) substrates. Two essentially different dislocation populations are observed: (i) a-type