Dislocation Reduction in AlN and GaN Bul
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Albrecht, M. ;Nikitina, I. P. ;Nikolaev, A. E. ;Melnik, Yu. V. ;Dmitriev, V. A.
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Article
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1999
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John Wiley and Sons
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English
โ 185 KB
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We analyse the dislocation distribution in GaN and AlN bulk crystals by transmission electron microscopy and X-ray diffraction. The crystals are grown by hydride vapour phase epitaxy onto 6H-SiC[0001] and Si(111) substrates. Two essentially different dislocation populations are observed: (i) a-type