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Hopping conduction in heavily doped bulk n-type SiC

✍ Scribed by W. C. Mitchel; A. O. Evwaeaye; S. R. Smith; M. D. Roth


Book ID
107457514
Publisher
Springer US
Year
1997
Tongue
English
Weight
543 KB
Volume
26
Category
Article
ISSN
0361-5235

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## Abstract The magnetic properties of conduction electrons (CE) in heavily doped n‐type 4H SiC have been studied with electron paramagnetic resonance (EPR) in the temperature interval from 7 to 140 K. An EPR line with β€œDyson lineshape” was observed in 4H SiC wafers with (__N__~D~–__N__~A~)β€‰β‰ˆβ€‰10^19