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Magnetoresistance in Heavily Doped n-Type Silicon

โœ Scribed by Tufte, O.; Stelzer, E.


Book ID
115459808
Publisher
The American Physical Society
Year
1965
Tongue
English
Weight
563 KB
Volume
139
Category
Article
ISSN
0031-899X

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Negative magnetoresistance in heavily do
โœ B. R. Sethi; P. K. Goyal; O. P. Sharma; P. C. Mathur ๐Ÿ“‚ Article ๐Ÿ“… 1983 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 376 KB

## Abstract Transverse magnetoresistance measurements are made on heavily doped nโ€type InSb single crystals in the temperature range 77 to 300 K. The magnetoresistance at low temperatures is found to be negative indicating a contribution of impurity band conduction to the electrical transport pheno