Negative magnetoresistance in heavily doped and compensated n-type InSb

✍ Scribed by B. R. Sethi; P. K. Goyal; O. P. Sharma; P. C. Mathur

• Publisher: John Wiley and Sons
• Year: 1983
• Tongue: English
• Weight: 376 KB
• Volume: 119
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.2221190234

✦ Synopsis

Abstract

Transverse magnetoresistance measurements are made on heavily doped n‐type InSb single crystals in the temperature range 77 to 300 K. The magnetoresistance at low temperatures is found to be negative indicating a contribution of impurity band conduction to the electrical transport phenomenon. The conductivity and Hall mobility measurements also provide evidence of impurity band conduction near liquid nitrogen temperature. The mobility of the charge carriers in the impurity band is estimated from the experimentally observed mobility.