✦ LIBER ✦

Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with light emission at room temperature

✍ Scribed by Kai Cui; Wenquan Ma; Jianliang Huang; Yang Wei; Yanhua Zhang; Yulian Cao; Yongxian Gu; Tao Yang

Book ID: 116836201
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 723 KB
Volume: 45
Category: Article
ISSN: 1386-9477
DOI: 10.1016/j.physe.2012.07.022

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Room-temperature operation type-II GaSb/

Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

✍ Lin, Shih-Yen; Tseng, Chi-Che; Lin, Wei-Hsun; Mai, Shu-Cheng; Wu, Shung-Yi; Chen 📂 Article 📅 2010 🏛 American Institute of Physics 🌐 English ⚖ 439 KB

Room temperature 1.3 μm emission fr

Room temperature 1.3 μm emission from self-assembled GaSb/GaAs quantum dots

✍ I Farrer; M.J Murphy; D.A Ritchie; A.J Shields 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 864 KB

Near 1.3 μm Emission at Room Temperature

Near 1.3 μm Emission at Room Temperature from InAsSb/GaAs Self-Assembled Quantum Dots on GaAs Substrates

✍ K. Suzuki; Y. Arakawa 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 103 KB

We observed for the first time clear emission near 1.3 mm at room temperature from InAs 0:9 Sb 0:1 self-assembled quantum dots on GaAs substrates. InAs 0:9 Sb 0:1 quantum dots were grown by molecular beam epitaxy using Stranski-Krastanov growth mode, for application to emission at 1.3 mm lasers. The

Structural and optical properties of typ

Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy

✍ K. Suzuki; R. A. Hogg; Y. Arakawa 📂 Article 📅 1999 🏛 American Institute of Physics 🌐 English ⚖ 262 KB