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Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

โœ Scribed by Lin, Shih-Yen; Tseng, Chi-Che; Lin, Wei-Hsun; Mai, Shu-Cheng; Wu, Shung-Yi; Chen, Shu-Han; Chyi, Jen-Inn

Book ID
121017339
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
439 KB
Volume
96
Category
Article
ISSN
0003-6951

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The transition mechanisms of type-II GaS
The transition mechanisms of type-II GaSb/GaAs quantum-dot infrared light-emitting diodes
โœ Chi-Che Tseng; Wei-Hsun Lin; Shung-Yi Wu; Shu-Han Chen; Shih-Yen Lin ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 220 KB

The light-emitting diode (LED) with a single GaSb QD layer embedded in a GaAs n-i-p structure operated under different injection currents and temperatures is investigated. With increase in injection currents, room-temperature electroluminescence (EL) peak blue shift is observed until a saturation of