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Multilayer vapor-phase epitaxial silicon millimeter-wave IMPATT diodes

โœ Scribed by Wen, C.P.; Weller, K.P.; Young, A.F.


Book ID
114590323
Publisher
IEEE
Year
1972
Tongue
English
Weight
306 KB
Volume
19
Category
Article
ISSN
0018-9383

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AlInN HEMT grown on SiC by metalorganic
โœ Guo, Shiping ;Gao, Xiang ;Gorka, Daniel ;Chung, Jinwoork W. ;Wang, Han ;Palacios ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 568 KB

## Abstract In this work we present the epitaxial and device results of AlInN/GaN HEMTs grown on SiC by metalorganic vapor phase epitaxy. High quality AlInN/GaN HEMT structures with subโ€10โ€‰nm AlInN barrier were grown with very low Ga background level (<1%). The low __R__~sh~ of 215โ€‰ฮฉ/sq was obtaine