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Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods

✍ Scribed by Shigefusa F. Chichibu; Takuya Ohmori; Naoyuki Shibata; Takahiro Koyama; Takeyoshi Onuma


Book ID
108191113
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
149 KB
Volume
66
Category
Article
ISSN
0022-3697

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