AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter-wave applications

✍ Scribed by Guo, Shiping ;Gao, Xiang ;Gorka, Daniel ;Chung, Jinwoork W. ;Wang, Han ;Palacios, Tomas ;Crespo, Antonio ;Gillespie, James K. ;Chabak, Kelson ;Trejo, Manuel ;Miller, Virginia ;Bellot, Mark ;Via, Glen ;Kossler, Mauricio ;Smith, Howard ;Tomich, David

• Book ID: 105365828
• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 568 KB
• Volume: 207
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200983621

✦ Synopsis

Abstract

In this work we present the epitaxial and device results of AlInN/GaN HEMTs grown on SiC by metalorganic vapor phase epitaxy. High quality AlInN/GaN HEMT structures with sub‐10 nm AlInN barrier were grown with very low Ga background level (<1%). The low R~sh~ of 215 Ω/sq was obtained with an excellent standard deviation of 1.1% across 3″ wafers. Lehighton RT contactless Hall tests show a high mobility of 1617 cm^2^/V s and sheet charge density of 1.76 × 10^13^/cm^2^. DC characteristics of an AlInN/GaN HEMT with a gate length of 0.1 µm and 25 nm Al~2~O~3~ passivation show maximum drain current (I~DS,max~) of 2.36 A/mm at V~GS~ = 2 V. Gate recessed devices with 0.15 µm gate length and 25 nm Al~2~O~3~ passivation resulted in maximum transconductance (g~m~) of 675 mS/mm, the highest value ever reported in AlInN transistors. Excellent frequency response was obtained. The maximum f~T~ is 86 GHz and f~max~ is 91.7 GHz.