✦ LIBER ✦

Performance of P-type epitaxial silicon millimeter-wave IMPATT diodes

✍ Scribed by Swartz, G.A.; Yuen-Sheng Chiang; Wen, C.P.; Gonzalez, A.

Book ID: 114591633
Publisher: IEEE
Year: 1974
Tongue: English
Weight: 667 KB
Volume: 21
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1974.17886

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Multilayer vapor-phase epitaxial silicon

Multilayer vapor-phase epitaxial silicon millimeter-wave IMPATT diodes

✍ Wen, C.P.; Weller, K.P.; Young, A.F. 📂 Article 📅 1972 🏛 IEEE 🌐 English ⚖ 306 KB

Multi-layer epitaxially grown silicon im

Multi-layer epitaxially grown silicon impatt diodes at millimeter-wave frequencies

✍ C. P. Wen; Y. S. Chiang; E. J. Denlinger 📂 Article 📅 1975 🏛 Springer US 🌐 English ⚖ 380 KB

Growth of GaAs millimeter wave impatt di

Growth of GaAs millimeter wave impatt diode material using low temperature vapor phase epitaxy

✍ B.D. Lauterwasser 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 708 KB

Comparative studies of Si, GaAs, and InP

Comparative studies of Si, GaAs, and InP millimeter-wave IMPATT diodes

✍ Lippens, D. ;Nieruchalski, J. L. ;Dalle, C. ;Rolland, P. A. 📂 Article 📅 1986 🏛 Springer 🌐 English ⚖ 550 KB

Effect of optical radiation on millimete

Effect of optical radiation on millimeter-wave characteristics and avalanche noise generation in double-drift impatt diodes based on opto-sensitive semiconductors

✍ S. K. Dash; S. P. Pati 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 157 KB

## Abstract RF properties and avalanche noise generation in opto‐sensitive GaAs, InP, GaInAs, and GaInAsP double‐drift IMPATT diodes with and without optical injection have been studied. The optimum frequency and RF characteristics undergo sufficient variation with increase of intensity of optical