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MOVPE growth of In x Ga 1- x N ( x ∼0.5) on Si(111) substrates with a pn junction on the surface

✍ Scribed by Yamamoto, A.; Mihara, A.; Hironaga, D.; Sugita, K.; Bhuiyan, A. G.; Hashimoto, A.; Shigekawa, N.; Watanabe, N.

Book ID: 124065621
Publisher: John Wiley and Sons
Year: 2013
Tongue: English
Weight: 261 KB
Volume: 10
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.201200649

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