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MOSFET scaling into the 10 nm regime

โœ Scribed by Leland Chang; Chenming Hu


Book ID
102620286
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
144 KB
Volume
28
Category
Article
ISSN
0749-6036

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We have performed numerical modeling of dual-gate ballistic n-MOSFETs with channel length of the order of 10 nm, including the effects of quantum tunneling along the channel and through the gate oxide. Our analysis includes a self-consistent solution of the full (two-dimensional) electrostatic probl