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Silicon Device Scaling to the Sub-10-nm Regime

โœ Scribed by Meikei Ieong; Bruce Doris; Jakub Kedzierski; Ken Rim; Min Yang


Book ID
101970452
Publisher
John Wiley and Sons
Year
2005
Weight
8 KB
Volume
36
Category
Article
ISSN
0931-7597

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We have performed numerical modeling of dual-gate ballistic n-MOSFETs with channel length of the order of 10 nm, including the effects of quantum tunneling along the channel and through the gate oxide. Our analysis includes a self-consistent solution of the full (two-dimensional) electrostatic probl