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Modeling of 10-nm-scale ballistic MOSFET's

โœ Scribed by Naveh, Y.; Likharev, K.K.


Book ID
121868047
Publisher
IEEE
Year
2000
Tongue
English
Weight
113 KB
Volume
21
Category
Article
ISSN
0741-3106

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We have performed numerical modeling of dual-gate ballistic n-MOSFETs with channel length of the order of 10 nm, including the effects of quantum tunneling along the channel and through the gate oxide. Our analysis includes a self-consistent solution of the full (two-dimensional) electrostatic probl