𝔖 Bobbio Scriptorium
✦   LIBER   ✦

MOS characterization of thermally oxided 6H silicon carbide

✍ Scribed by Sanders, J.W.; Pan, J.; Xie, M.; Sheppard, S.T.; Mathur, M.; Cooper, J.A., Jr.; Melloch, M.R.

Book ID
114535317
Publisher
IEEE
Year
1993
Tongue
English
Weight
275 KB
Volume
40
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Thin oxide growth on 6H-silicon carbide
Thin oxide growth on 6H-silicon carbide
✍ Vickram R. Vathulya; William E. Wagner; Floyd C. Miller; Marvin H. White πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 249 KB

A marked difference is observed for the initial oxidation rates of 6H-SiC (silicon face) obtained with oxygen and argon as carrier gases in a wet oxidation process. A modified Deal-Grove model with surface and bulk reaction constants is presented to model the early oxidation process at the SiO2-SiC

CVD growth and characterization of singl
CVD growth and characterization of single-crystalline 6H silicon carbide
✍ S. Karmann; C. Haberstroh; F. Engelbrecht; W. Suttrop; A. SchΓΆner; M. Schadt; R. πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 352 KB

## Homoepitaxial growth of 6H-SiC layers is performed at 1600Β°C using propane and silane as source gases. The influence of the growth parameters, temperature and gas concentrations on the growth rate is discussed. The films are examined by structural, optical and electrical characterization techni