✦ LIBER ✦

High frequency characteristics and modelling of p-type 6H-silicon carbide MOS structures

✍ Scribed by J. Fernández; P. Godignon; S. Berberich; J. Rebollo; G. Brezeanu; J. Millán

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 536 KB
Volume: 39
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(96)00038-x

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Temperature stability of cobalt Schottky

Temperature stability of cobalt Schottky contacts on n- and p-type 6H silicon carbide

✍ N. Lundberg; C.-M. Zetterling; M. Östling 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 511 KB

Characteristics and radiation effects of

Characteristics and radiation effects of MOS capacitors with Al2O3 layers in p-type silicon

✍ F.A.S. Soliman; A.S.S. Al-Kabbani; K.A.A. Sharshar; M.S.I. Rageh 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 509 KB

Determination of the Density Distributio

Determination of the Density Distribution of Interface States from High- and Low-Frequency Capacitance Characteristics of the Tin/Organic Pyronine-B/p-type Silicon Structure

✍ Muzaffer Çakar; Cabir Temirci; Abdulmecit Türüt 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 95 KB 👁 2 views

High frequency capacitance-voltage and c

High frequency capacitance-voltage and conductance-voltage characteristics of d.c. sputter deposited a-carbon/silicon MIS structures

✍ A.Azim Khan; John A. Woollam; Y. Chung 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 670 KB

High frequency capacitance-voltage chara

High frequency capacitance-voltage characteristics of MOS tunnel diodes in presence of interface states and fixed oxide charges

✍ P. Chattopadhyay 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 250 KB

The Conductance- and Capacitance-Frequen

The Conductance- and Capacitance-Frequency Characteristics of the Rectifying Junctions Formed by Sublimation of Organic Pyronine-B on p-Type Silicon

✍ M. Çakar; A. Türüt; Y. Onganer 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 180 KB

The rectifying junction characteristics of the organic compound pyronine-B film on a p-type Si substrate has been studied. The pyronine-B has been sublimed on the top of p-Si surface. The barrier height and ideality factor values of 0.7970.04 and 1.1370.06 eV for this structure have been obtained fr