The Conductance- and Capacitance-Frequency Characteristics of the Rectifying Junctions Formed by Sublimation of Organic Pyronine-B on p-Type Silicon

✍ Scribed by M. Çakar; A. Türüt; Y. Onganer

• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 180 KB
• Volume: 168
• Category: Article
• ISSN: 0022-4596
• DOI: 10.1006/jssc.2002.9706

✦ Synopsis

The rectifying junction characteristics of the organic compound pyronine-B film on a p-type Si substrate has been studied. The pyronine-B has been sublimed on the top of p-Si surface. The barrier height and ideality factor values of 0.7970.04 and 1.1370.06 eV for this structure have been obtained from the forward bias current-voltage (I-V) characteristics. From the low capacitance-frequency (C-f ) characteristics as well as conductance-frequency (G-f ) characteristics, the energy distribution of the interface states and their relaxation time have been determined in the energy range of (0.53ÀE v )-(0.79ÀE v ) eV taking into account the forward bias I-V data. The interface state density N ss ranges from 4.93 Â 10 10 cm À2 eV À1 in (0.79ÀE v ) eV to 3.67 Â 10 13 cm À2 eV À1 in (0.53ÀE v ) eV. Furthermore, the relaxation ranges from 3.80 Â 10 À3 s in (0.53ÀE v ) eV to 4.21 Â 10 À4 s in (0.79ÀE v ) eV. It has been seen that the interface state density has an exponential rise with bias from the midgap towards the top of the valence band. The relaxation time shows a slow exponential rise with bias from the top of the valence band towards the midgap.