✦ LIBER ✦

Oxidation of 6H-α Silicon Carbide Platelets

✍ Scribed by RICHARD C. A. HARRIS

Book ID: 110814085
Publisher: John Wiley and Sons
Year: 1975
Tongue: English
Weight: 336 KB
Volume: 58
Category: Article
ISSN: 0002-7820
DOI: 10.1111/j.1151-2916.1975.tb18969.x

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Creep of 6H α-Silicon Carbide Single Cry

Creep of 6H α-Silicon Carbide Single Crystals

✍ Gregory S. Corman 📂 Article 📅 1992 🏛 John Wiley and Sons 🌐 English ⚖ 407 KB

Thin oxide growth on 6H-silicon carbide

✍ Vickram R. Vathulya; William E. Wagner; Floyd C. Miller; Marvin H. White 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 249 KB

A marked difference is observed for the initial oxidation rates of 6H-SiC (silicon face) obtained with oxygen and argon as carrier gases in a wet oxidation process. A modified Deal-Grove model with surface and bulk reaction constants is presented to model the early oxidation process at the SiO2-SiC

MOS characterization of thermally oxided

MOS characterization of thermally oxided 6H silicon carbide

✍ Sanders, J.W.; Pan, J.; Xie, M.; Sheppard, S.T.; Mathur, M.; Cooper, J.A., Jr.; 📂 Article 📅 1993 🏛 IEEE 🌐 English ⚖ 275 KB

Preparation of silicon carbide platelets

✍ Zhou You; Jiang Dongliang; Tan Shouhong; Guo Jingkun 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 565 KB

Electronic properties of epitaxial 6H si

Electronic properties of epitaxial 6H silicon carbide

✍ R.S. Allgaier 📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 118 KB

Electronic properties of epitaxial 6H si

Electronic properties of epitaxial 6H silicon carbide

✍ B.W. Wessels; H.C. Gatos 📂 Article 📅 1976 🏛 Elsevier Science 🌐 English ⚖ 101 KB