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MOS capacitance measurements for high-leakage thin dielectrics

โœ Scribed by Yang, K.J.; Chenming Hu


Book ID
114537794
Publisher
IEEE
Year
1999
Tongue
English
Weight
46 KB
Volume
46
Category
Article
ISSN
0018-9383

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Electrical characterization of thin SOI
โœ D. Wang; A. Ueda; H. Takada; H. Nakashima ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 257 KB

A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (t g ) using transient capacitance method for lateral metal-oxidesemiconductor (MOS) capacitor. The later