Epitaxial heterostructures YBa 2 Cu 3 O x (YBCO)/CeO 2 /NdGaO 3 were prepared on tilted-axes NdGaO 3 substrates using laser ablation technique. Morphology, crystal structure and electrical properties of the obtained films were characterized. The seeding mechanisms are affected by the tilt angle, res
Morphology, structure, and electrical properties of YBa2Cu3Ox thin films on tilted NdGaO3 substrates, deposited by DC-sputtering
β Scribed by Peter B. Mozhaev; Iosif M. Kotelyanskii; Valery A. Luzanov; Julia E. Mozhaeva; Todor Donchev; Emil Mateev; Timur Nurgaliev; Igor K. Bdikin; Bakhyt Zh. Narymbetov
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 273 KB
- Volume
- 419
- Category
- Article
- ISSN
- 0921-4534
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β¦ Synopsis
Thin YBa 2 Cu 3 O x (YBCO) films were deposited using DC-sputtering technique on NdGaO 3 substrates, tilted from (1 1 0) orientation by 0-26Β°. The structure and surface quality of the substrates were carefully characterized to obtain reliable results of thin films deposition. Structural, morphological and electrical properties of the YBCO thin films show three different ranges of inclination angle: vicinal, intermediate and high. In the vicinal range the properties of the film are generally the same as of the standard films deposited on (1 1 0) NdGaO 3 substrate. An increase of the inclination angle to the intermediate range results in a significant improvement of morphology and structural quality of the film. Best electrical parameters are measured for the films of the intermediate range also. Probable reason for such behavior is simultaneous and regular seeding of the film in the joints of facets on the substrate surface. Further increase of inclination angle leads to step bunching and oxygen out-diffusion, destroying both structural and electrical perfection of the tilted-axes YBCO film.
π SIMILAR VOLUMES
Thin films of Y1Ba2Cu30~have been prepared by sputter deposition. The sputter parameters like gas pressure, gas mixture, distance target-substrate and deposition temperature h.ave been varied in oroer to find optimum contritions tor, epitaxi~l film growth. Witl~ optimum conditions Te > 90 K and crit