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Sputter deposition of epitaxial Y1Ba2Cu3Ox-films on SrTiO3, MgO, LaAlO3, NdGaO3 and YSZ/sapphire substrates

✍ Scribed by O. Gieres; H. Schmidt; K. Hradil; W. Hösler; R. Seeböck

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
260 KB
Volume
185-189
Category
Article
ISSN
0921-4534

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✦ Synopsis

Thin films of Y1Ba2Cu30~have been prepared by sputter deposition. The sputter parameters like gas pressure, gas mixture, distance target-substrate and deposition temperature h.ave been varied in oroer to find optimum contritions tor, epitaxi~l film growth. Witl~ optimum conditions Te > 90 K and critical current densities Jc > 5 *10 ° A/cm" couldbe achieved on standard substrateslike SrTiO~, LaAIO-~, MgO and NifGaO 3. On sapphire substrates with an llF-spul~tered epitaxial buffer'layer of YSZ the YBCO films reachedT c > 90 K and Jc > 2 *10 ° A/cm z at 77 K.

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