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Morphology of heteroepitaxial β-SiC films grown on Si(111) through high-vacuum chemical vapor deposition from hexane vapors

✍ Scribed by L. K. Orlov; Yu. N. Drozdov; V. B. Shevtsov; V. A. Bozhenkin; V. I. Vdovin

No coin nor oath required. For personal study only.

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