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Morphology and growth rate oF β-SiC grown on (100) silicon by chemical vapor deposition

✍ Scribed by P.E.R. Nordquist; G. Kelner; M.L. Gipe; P.H. Klein

Book ID
119124272
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
361 KB
Volume
8
Category
Article
ISSN
0167-577X

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Chemical vapor deposition of β-SiC on si
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✍ J.C. Pazik; G. Kelner; N. Bottka; J.A. Freitas Jr. 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 381 KB

Cubic silicon carbide (t-SiC) films have been grown epitaxially on silicon-on-sapphire (SOS) substrates by chemical vapor deposition. A fresh layer of silicon is first deposited in situ on the SOS substrate at approximately 1050 °C. The silicon layer is then carbonized while being heated to 1360 °C.