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High mobility β-SiC epilayer prepared by low-pressure rapid thermal chemical vapor deposition on a (100) silicon substrate

✍ Scribed by J.D. Hwang; Y.K. Fang; Y.J. Song; D.N. Yaung


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
280 KB
Volume
272
Category
Article
ISSN
0040-6090

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