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Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0  0 0 1) Si faces

✍ Scribed by G.S. Sun; X.F. Liu; Q.C. Gong; L. Wang; W.S. Zhao; J.Y. Li; Y.P. Zeng; J.M. Li

No coin nor oath required. For personal study only.

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Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0&#xa0;&#xa0;0&#xa0;0&#xa0;1) Si faces