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Monolithic ultra-broadband transimpedance amplifiers using AlGaAs/GaAs heterojunction bipolar transistors

โœ Scribed by Nagano, N.; Suzaki, T.; Soda, M.; Kasahara, K.; Takeuchi, T.; Honjo, K.


Book ID
114551740
Publisher
IEEE
Year
1994
Tongue
English
Weight
986 KB
Volume
42
Category
Article
ISSN
0018-9480

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Fully planar AlGaAs/GaAs heterojunction
โœ R. Driad; A.M. Duchenois; G. Le Roux; D. Zerguine; F. Alexandre; J.L. Benchimol; ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 242 KB

Fully planar A1GaAs/GaAs heterojunction bipolar transitors (HBTs) were fabricated successfully using chemical beam epitaxy selective regrowth. The device performance and fabrication process are presented along with characterization of the electrical, structural and optical properties of GaAs : C lay