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Improved emitter transit time using AlGaAs-GaInP composite emitter in GaInP/GaAs heterojunction bipolar transistors

✍ Scribed by Jae-Woo Park; Pavlidis, D.; Mohammadi, S.; Guyaux, J.-L.; Garcia, J.-C.


Book ID
114538719
Publisher
IEEE
Year
2001
Tongue
English
Weight
161 KB
Volume
48
Category
Article
ISSN
0018-9383

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