Fully planar AlGaAs/GaAs heterojunction bipolar transistors using chemical beam epitaxy selective growth

✍ Scribed by R. Driad; A.M. Duchenois; G. Le Roux; D. Zerguine; F. Alexandre; J.L. Benchimol; P. Legay; P. Launay

• Book ID: 103954637
• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 242 KB
• Volume: 28
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(94)90060-4

✦ Synopsis

Fully planar A1GaAs/GaAs heterojunction bipolar transitors (HBTs) were fabricated successfully using chemical beam epitaxy selective regrowth. The device performance and fabrication process are presented along with characterization of the electrical, structural and optical properties of GaAs : C layers which correspond to the HBT base layer.