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Quasi-planar GaAs heterojunction bipolar transistor device entirely grown by chemical beam epitaxy

โœ Scribed by F. Alexandre; D. Zerguine; P. Launay; J.L. Benchimol; M. Berz; B. Sermage; D. Komatitsch; M. Juhel


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
510 KB
Volume
136
Category
Article
ISSN
0022-0248

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