𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Monolithic transformers and their application in a differential CMOS RF low-noise amplifier

✍ Scribed by Zhou, J.J.; Allstot, D.J.

Book ID
115473097
Publisher
IEEE
Year
1998
Tongue
English
Weight
526 KB
Volume
33
Category
Article
ISSN
0018-9200

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Flicker noise reduction in RF CMOS mixer
Flicker noise reduction in RF CMOS mixer using differential active inductor
✍ M. A. Abdelghany; R. K. Pokharel; H. Kanaya; K. Yoshida 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 452 KB

## Abstract This article presents a low flicker noise (1/__f__), double‐balanced Gilbert‐cell mixer. As the down converted base‐band signal is strongly affected by the low‐frequency flicker noise, resulting in mixer signal‐noise ratio (SNR) degradation, a dynamic current injection technique has bee

A Q-band CMOS low-noise amplifier using
A Q-band CMOS low-noise amplifier using a low-voltage cascode in 0.13-μm CMOS technology
✍ Seong-Gwon Lee; Jong-Wook Lee 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 638 KB

## Abstract A Q‐band low‐noise amplifier (LNA) suitable for low‐voltage operation is presented in this paper.The amplifier uses a low‐voltage cascode structure in the first stage of the amplifier and was fabricated using a 0.13‐μm RF CMOS process with eight layers of copper metallization. Low‐volta

A miniature low-power ultra-wideband low
A miniature low-power ultra-wideband low noise amplifier in 0.18 μm CMOS
✍ Xin Guan; Cam Nguyen 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 515 KB

A 0.18-lm CMOS low-noise amplifier (LNA) operating over the entire ultrawideband (UWB) frequency range of 3.1-10.6 GHz, has been designed, fabricated, and tested. The UWB LNA achieves the measured power gain of 7.5 6 2.5 dB, minimum input matching of À8 dB, noise figure from 3.9 to 6.3 dB, and IIP3