A1203-films deposited by atomic layer epitaxy onto silicon wafers were investigated structurally and electrically. A post-deposition anneal at 900Β°C resulted in a decrease in film thickness of about 10% and an increase in the index of refraction of about 3%. The densification did not significantly i
β¦ LIBER β¦
Monocrystalline ZnO Films on GaN/Al 2 O 3 by Atomic Layer Epitaxy in Gas Flow
β Scribed by Kopalko, K.; Godlewski, M.; Domagala, J. Z.; Lusakowska, E.; Minikayev, R.; Paszkowicz, W.; Szczerbakow, A.
- Book ID
- 120190512
- Publisher
- American Chemical Society
- Year
- 2004
- Tongue
- English
- Weight
- 100 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0897-4756
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Properties of Al2O3-films deposited on s
β
Per Ericsson; Stefan Bengtsson; Jarmo Skarp
π
Article
π
1997
π
Elsevier Science
π
English
β 293 KB
Studies on the morphology of Al2O3 thin
β
Mikko Ritala; Heini Saloniemi; Markku LeskelΓ€; Thomas Prohaska; Gernot Friedbach
π
Article
π
1996
π
Elsevier Science
π
English
β 889 KB
Selective switching of GaN polarity on G
β
Hite, Jennifer K.; Garces, Nelson Y.; Goswami, Ramasis; Mastro, Michael A.; Kub,
π
Article
π
2014
π
Institute of Pure and Applied Physics
π
English
β 1002 KB
Effects of annealing temperature and Al2
β
C.R. Kim; J.Y. Lee; J.H. Heo; C.M. Shin; T.M. Lee; J.H. Park; H. Ryu; J.H. Chang
π
Article
π
2010
π
Elsevier Science
π
English
β 370 KB
ZnO deposited on Si (111) with Al2O3 buf
β
Gan, Xue-Wei; Wang, Ti; Wu, Hao; Liu, Chang
π
Article
π
2014
π
Elsevier Science
π
English
β 1009 KB
Dual-energy Si ion implantation in epita
β
D. Ozaki; J. Ebihara; Y. Ohshima; R. Takeuchi; T. Inada
π
Article
π
2007
π
Elsevier Science
π
English
β 186 KB
Silicon ions have been implanted in undoped n-type GaN layers epitaxially grown on an AlN/(0001)-Al 2 O 3 substrate. Electrical profiles for n-type GaN layers, formed by dual-energy implantation with 50 and 100 keV Si + ions to a total fluence of 6 β’ 10 15 /cm 2 , have been examined by differential